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Triple-Output Power-Management IC for
Microprocessor-Based Systems
ELECTRICAL CHARACTERISTICS (continued)
(V INP1 = V INP2 = V INP3 = V IN = 3.6V, V LBI = 1.1V, V DBI = 1.35V, MR = ON2 = IN, PGM3 = GND, circuit of Figure 1, T A = -40 ° C to
+85 ° C unless otherwise noted. Typical values are at T A = +25 ° C.)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
RSO , LBO , OUTOK
Output Low Level
RSO , LBO , OUTOK
Output High Leakage Current
ON2, MR , Input High Level
ON2, MR , Input Low Level
2.6V ≤ V IN _ ≤ 5.5V, sinking 1mA
V IN_ = 1V, sinking 100μA
V R SO = V L B O = V OUTOK = 5.5V
2.6V ≤ V IN _ ≤ 5.5V
2.6V ≤ V IN _ ≤ 5.5V
1.6
0.4
0.1
0.4
V
μA
V
V
ON2, MR , PGM3, Input Leakage
Current
V ON2 = V MR = V PGM3 = GND, 5.5V
-1
+1
μA
REG3 target = 1.8V, IN = 2.6V to 5.5V
0.4
PGM3 Selection Threshold
REG3 target = 2.5V, IN = 2.6V to 5.5V
1.1
REF
1.4
V
REG3 target = 3.3V, IN = 2.6V to 5.5V
V IN_ - 0.25
Note 1: Dropout voltage is not tested. Guaranteed by P-channel switch resistance and assumes a 72m ? (REG1 and
REG3) or 162m ? (REG2) maximum ESR of inductor.
Note 2: The maximum output current is guaranteed by the following equation:
I LIM ?
1 + ( R N + R L )
I OUT ( MAX ) =
where:
V OUT ( 1 ? D )
2 × ? × L
( 1 ? D )
2 × ? × L
D =
V OUT + I OUT(MAX ) (R N + R L )
V IN + I OUT ( MAX ) ( R N + R P )
and:
R N = N-channel synchronous rectifier R DSON
R P = P-channel power switch R DSON
R L = external inductor ESR
I OUT(MAX) = maximum required load current
? = operating frequency minimum
L = external inductor value
Note 3: Specified resistance is in series with an internal diode to LX2.
Note 4: Specifications to -40 ° C are guaranteed by design and not production tested.
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